Potential Of SnO2-x FETs for Radiation-Tolerant Electronics (KNU et al.)

A new technical paper titled “Effects of Proton Radiation on Tin Oxide: Implications for Space Electronics” was published by researchers at Kyungpook National University and Korea Atomic Energy Research Institute. Abstract “This study examines the effects of 5 MeV proton irradiation, applied at fluences of 1 × 1011, 1 × 1012, 1 × 1013, and 1... » read more
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