109

A new technical paper titled “Ultra-Fast, Low-Resistance Nano Gap Electromechanical Switch for Power Gating Applications” was published by researchers at KAIST and Chonnam National University. Abstract “The growing demand for artificial intelligence and high-performance computing accelerates concerns over leakage power in highly integrated semiconductor systems. Power gating can reduce the leakage power by disconnecting idle... » read more
The post Nano Gap MEMS Switches for Power Gating in Low Power Systems (KAIST, Chonnam National Univ.) appeared first on Semiconductor Engineering.
Be respectful and constructive. Comments are moderated.

No comments yet.