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A new technical paper titled “Ultra-Fast, Low-Resistance Nano Gap Electromechanical Switch for Power Gating Applications” was published by researchers at KAIST and Chonnam National University. Abstract “The growing demand for artificial intelligence and high-performance computing accelerates concerns over leakage power in highly integrated semiconductor systems. Power gating can reduce the leakage power by disconnecting idle... » read more
The post Nano Gap MEMS Switches for Power Gating in Low Power Systems (KAIST, Chonnam National Univ.) appeared first on Semiconductor Engineering.