MoS2 Memristors With Fast Switching Speed and Low Power Consumption (AMO, RWTH Aachen et al.)

A new technical paper titled “Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications” was published by researchers at AMO GmbH, RWTH Aachen, Forschungszentrum Jülich, Peter Grünberg Institute, Eindhoven University of Technology et al. Abstract “Memristors based on 2D materials have garnered significant attention. Their fast resistive switching... » read more
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